High-speed General Purpose Demodulation Pixels Based on Buried Photodiodes
نویسندگان
چکیده
Using a standard 0.18um CMOS process with a buried photodiode (BPD) option, test pixels with a single transfer gate were characterized. The test pixels enabled finding an optimized BPD layout that minimizes the potential barriers hindering the charge transfer. Demodulation pixels having a 6.3um pitch or less were then developed and demonstrated to demodulate light signals up to at least 50MHz. Moreover, charge transfer noise was highly reduced by optimizing the pixel operating conditions. Demodulation of single photoelectrons could thus be made possible.
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